Opto-Electronic Characterization CdTe Solar Cells from TCO to Back Contact with Nano-Scale CL Probe

John Moseley, Mowafak Al-Jassim, Darius Kuciauskas, Harvey Guthrey, Joel Duenow, Wyatt Metzger, Richard Ahrenkiel, Naba Paudel, Hasitha Mahabaduge, Yanfa Yan

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations

Abstract

We used cathodoluminescence (CL) (spectrum-per-pixel) imaging on beveled CdTe solar cell sections to investigate the opto-electronic properties of these devices from the TCO to the back contact. We used a nano-scale CL probe to resolve luminescence from grain boundary (GB) and grain interior (GI) locations near the CdS/CdTe interface where the grains are very small. As-deposited, CdCl2-treated, Cu-treated, and (CdCl2+Cu)-treated cells were analyzed. Color-coded CL spectrum imaging maps on bevels illustrate the distribution of the T=6 K luminescence transitions through the depth of devices with unprecedented spatial resolution. The CL at the GBs and GIs is shown to vary significantly from the front to the back of devices and is a sensitive function of processing. Supporting D-SIMS depth profile, TRPL lifetime, and C-V measurements are used to link the CL data to the J-V performance of devices.

Original languageAmerican English
Number of pages4
DOIs
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans
Period14/06/1519/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5K00-63562

Keywords

  • cathodoluminescence
  • CdTe solar cells
  • grain boundaries
  • opto-electronic properties

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