Opto-Electronic Properties of Co-Zn-Ni-O Films Deposited by RF-Sputtering at Ambient-Temperature

J. C. Ford; A. Zakutayev; P. F. Ndione; A. K. Sigdel; N. E. Widjonarko; P. A. Parilla; B. Van Zeghbroeck; J. J. Berry; D. S. Ginley; J. D. Perkins

doi:10.1016/j.jallcom.2019.05.275

Opto-Electronic Properties of Co-Zn-Ni-O Films Deposited by RF-Sputtering at Ambient-Temperature

J. C. Ford, A. Zakutayev, P. F. Ndione, A. K. Sigdel, N. E. Widjonarko, P. A. Parilla, B. Van Zeghbroeck, J. J. Berry, D. S. Ginley, J. D. Perkins

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Abstract

Co-Zn-Ni-O thin films were grown on glass at ambient temperature (T_S < 65 °C) by co-sputtering from Co₃O₄, ZnO, and NiO targets to determine the structural and opto-electronic properties across the ternary composition space. Compositional domains with spinel, wurtzite, rock-salt, and mixed phases were observed, albeit with very weak X-ray diffraction peaks, overall suggesting the likely presence of a co-existent amorphous component. The electrical conductivity had a maximum value of ∼35 S/cm that occurs where the optical absorption is also the strongest. The work functions range from 5.0 to 5.8 eV for all samples, but with no clear composition-based trends. Overall, it appears that the optoelectronic properties of the Co-Zn-Ni-O materials are much less sensitive to substrate temperature compared to other p-type oxide semiconductors, resulting in technologically-relevant ambient-temperature-deposited thin films.

Original language	American English
Pages (from-to)	409-414
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	801
DOIs	https://doi.org/10.1016/j.jallcom.2019.05.275 https://doi.org/10.1016/j.jallcom.2019.05.275
State	Published - 15 Sep 2019

Bibliographical note

Publisher Copyright:
© 2019 The Authors

NREL Publication Number

NREL/JA-5K00-68962

Keywords

Crystal structure
Electrical transport
Optical properties
Oxide materials
Thin films
Vapor deposition

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https://www.nrel.gov/docs/fy19osti/68962.pdf

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Ford, J. C., Zakutayev, A., Ndione, P. F., Sigdel, A. K., Widjonarko, N. E., Parilla, P. A., Van Zeghbroeck, B., Berry, J. J., Ginley, D. S., & Perkins, J. D. (2019). Opto-Electronic Properties of Co-Zn-Ni-O Films Deposited by RF-Sputtering at Ambient-Temperature. Journal of Alloys and Compounds, 801, 409-414. https://doi.org/10.1016/j.jallcom.2019.05.275, https://doi.org/10.1016/j.jallcom.2019.05.275

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title = "Opto-Electronic Properties of Co-Zn-Ni-O Films Deposited by RF-Sputtering at Ambient-Temperature",

abstract = "Co-Zn-Ni-O thin films were grown on glass at ambient temperature (TS < 65 °C) by co-sputtering from Co3O4, ZnO, and NiO targets to determine the structural and opto-electronic properties across the ternary composition space. Compositional domains with spinel, wurtzite, rock-salt, and mixed phases were observed, albeit with very weak X-ray diffraction peaks, overall suggesting the likely presence of a co-existent amorphous component. The electrical conductivity had a maximum value of ∼35 S/cm that occurs where the optical absorption is also the strongest. The work functions range from 5.0 to 5.8 eV for all samples, but with no clear composition-based trends. Overall, it appears that the optoelectronic properties of the Co-Zn-Ni-O materials are much less sensitive to substrate temperature compared to other p-type oxide semiconductors, resulting in technologically-relevant ambient-temperature-deposited thin films.",

keywords = "Crystal structure, Electrical transport, Optical properties, Oxide materials, Thin films, Vapor deposition",

author = "Ford, {J. C.} and A. Zakutayev and Ndione, {P. F.} and Sigdel, {A. K.} and Widjonarko, {N. E.} and Parilla, {P. A.} and {Van Zeghbroeck}, B. and Berry, {J. J.} and Ginley, {D. S.} and Perkins, {J. D.}",

note = "Publisher Copyright: {\textcopyright} 2019 The Authors",

year = "2019",

month = sep,

day = "15",

doi = "10.1016/j.jallcom.2019.05.275",

language = "American English",

volume = "801",

pages = "409--414",

journal = "Journal of Alloys and Compounds",

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Ford, JC, Zakutayev, A , Ndione, PF, Sigdel, AK, Widjonarko, NE, Parilla, PA, Van Zeghbroeck, B, Berry, JJ , Ginley, DS & Perkins, JD 2019, 'Opto-Electronic Properties of Co-Zn-Ni-O Films Deposited by RF-Sputtering at Ambient-Temperature', Journal of Alloys and Compounds, vol. 801, pp. 409-414. https://doi.org/10.1016/j.jallcom.2019.05.275, https://doi.org/10.1016/j.jallcom.2019.05.275

TY - JOUR

T1 - Opto-Electronic Properties of Co-Zn-Ni-O Films Deposited by RF-Sputtering at Ambient-Temperature

AU - Ford, J. C.

AU - Zakutayev, A.

AU - Ndione, P. F.

AU - Sigdel, A. K.

AU - Widjonarko, N. E.

AU - Parilla, P. A.

AU - Van Zeghbroeck, B.

AU - Berry, J. J.

AU - Ginley, D. S.

AU - Perkins, J. D.

PY - 2019/9/15

Y1 - 2019/9/15

N2 - Co-Zn-Ni-O thin films were grown on glass at ambient temperature (TS < 65 °C) by co-sputtering from Co3O4, ZnO, and NiO targets to determine the structural and opto-electronic properties across the ternary composition space. Compositional domains with spinel, wurtzite, rock-salt, and mixed phases were observed, albeit with very weak X-ray diffraction peaks, overall suggesting the likely presence of a co-existent amorphous component. The electrical conductivity had a maximum value of ∼35 S/cm that occurs where the optical absorption is also the strongest. The work functions range from 5.0 to 5.8 eV for all samples, but with no clear composition-based trends. Overall, it appears that the optoelectronic properties of the Co-Zn-Ni-O materials are much less sensitive to substrate temperature compared to other p-type oxide semiconductors, resulting in technologically-relevant ambient-temperature-deposited thin films.

AB - Co-Zn-Ni-O thin films were grown on glass at ambient temperature (TS < 65 °C) by co-sputtering from Co3O4, ZnO, and NiO targets to determine the structural and opto-electronic properties across the ternary composition space. Compositional domains with spinel, wurtzite, rock-salt, and mixed phases were observed, albeit with very weak X-ray diffraction peaks, overall suggesting the likely presence of a co-existent amorphous component. The electrical conductivity had a maximum value of ∼35 S/cm that occurs where the optical absorption is also the strongest. The work functions range from 5.0 to 5.8 eV for all samples, but with no clear composition-based trends. Overall, it appears that the optoelectronic properties of the Co-Zn-Ni-O materials are much less sensitive to substrate temperature compared to other p-type oxide semiconductors, resulting in technologically-relevant ambient-temperature-deposited thin films.

KW - Crystal structure

KW - Electrical transport

KW - Optical properties

KW - Oxide materials

KW - Thin films

KW - Vapor deposition

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DO - 10.1016/j.jallcom.2019.05.275

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SN - 0925-8388

VL - 801

SP - 409

EP - 414

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Opto-Electronic Properties of Co-Zn-Ni-O Films Deposited by RF-Sputtering at Ambient-Temperature

Abstract

Bibliographical note

NREL Publication Number

Keywords

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