Opto-Electronic Properties of Co-Zn-Ni-O Films Deposited by RF-Sputtering at Ambient-Temperature

J. C. Ford, A. Zakutayev, P. F. Ndione, A. K. Sigdel, N. E. Widjonarko, P. A. Parilla, B. Van Zeghbroeck, J. J. Berry, D. S. Ginley, J. D. Perkins

Research output: Contribution to journalArticlepeer-review

5 Scopus Citations


Co-Zn-Ni-O thin films were grown on glass at ambient temperature (TS < 65 °C) by co-sputtering from Co3O4, ZnO, and NiO targets to determine the structural and opto-electronic properties across the ternary composition space. Compositional domains with spinel, wurtzite, rock-salt, and mixed phases were observed, albeit with very weak X-ray diffraction peaks, overall suggesting the likely presence of a co-existent amorphous component. The electrical conductivity had a maximum value of ∼35 S/cm that occurs where the optical absorption is also the strongest. The work functions range from 5.0 to 5.8 eV for all samples, but with no clear composition-based trends. Overall, it appears that the optoelectronic properties of the Co-Zn-Ni-O materials are much less sensitive to substrate temperature compared to other p-type oxide semiconductors, resulting in technologically-relevant ambient-temperature-deposited thin films.

Original languageAmerican English
Pages (from-to)409-414
Number of pages6
JournalJournal of Alloys and Compounds
StatePublished - 15 Sep 2019

Bibliographical note

Publisher Copyright:
© 2019 The Authors

NREL Publication Number

  • NREL/JA-5K00-68962


  • Crystal structure
  • Electrical transport
  • Optical properties
  • Oxide materials
  • Thin films
  • Vapor deposition


Dive into the research topics of 'Opto-Electronic Properties of Co-Zn-Ni-O Films Deposited by RF-Sputtering at Ambient-Temperature'. Together they form a unique fingerprint.

Cite this