Optoelectronic and Structural Characterization of Trapezoidal Defects in 4H-SiC Epilayers and the Effect on MOSFET Reliability: Article No. 075704

Sami El Hageali, Harvey Guthrey, Steven Johnston, Andrew Norman, Jake Soto, Bruce Odekirk, Robert Stahlbush, Nadeemullah Mahadik, Brian Gorman, Mowafak Al-Jassim

Research output: Contribution to journal › Article › peer-review

3 Scopus Citations

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