Abstract
The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.
Original language | American English |
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Patent number | 11,462,688 B2 |
Filing date | 4/10/22 |
State | Published - 2022 |
NREL Publication Number
- NREL/PT-5K00-84322
Keywords
- electron transport material (ETM)
- hole transport material (HTM)
- perovskite
- semiconducting material