Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2

Lorelle M. Mansfield, Darius Kuciauskas, Patricia Dippo, Jian V. Li, Karen Bowers, Bobby To, Clay Dehart, Kannan Ramanathan

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations

Abstract

Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.

Original languageAmerican English
Number of pages4
DOIs
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans
Period14/06/1519/06/15

Bibliographical note

Also published in the IEEE Journal of Photovoltaics: see NREL/JA-5K00-64376

NREL Publication Number

  • NREL/CP-5K00-63622

Keywords

  • Cu(In,Ga)Se2
  • photoluminescence
  • solar cells
  • thin-films

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