Abstract
Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.
Original language | American English |
---|---|
Number of pages | 4 |
DOIs | |
State | Published - 14 Dec 2015 |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 |
Conference
Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
---|---|
Country/Territory | United States |
City | New Orleans |
Period | 14/06/15 → 19/06/15 |
Bibliographical note
Also published in the IEEE Journal of Photovoltaics: see NREL/JA-5K00-64376NREL Publication Number
- NREL/CP-5K00-63622
Keywords
- Cu(In,Ga)Se2
- photoluminescence
- solar cells
- thin-films