Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2

Lorelle Mansfield, Darius Kuciauskas, Patricia Dippo, Bobby To, Clay DeHart, Kannan Ramanathan, Karen Bowers

Research output: Contribution to conferencePaper

3 Scopus Citations


Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.
Original languageAmerican English
Number of pages4
StatePublished - 2015
Event2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) - New Orleans, Louisiana
Duration: 14 Jun 201519 Jun 2015


Conference2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
CityNew Orleans, Louisiana

Bibliographical note

Also published in the IEEE Journal of Photovoltaics: see NREL/JA-5K00-64376

NREL Publication Number

  • NREL/CP-5K00-63622


  • Cu(In,Ga)Se2
  • photoluminescence
  • solar cells
  • thin-films


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