Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se2

Lorelle M. Mansfield, Darius Kuciauskas, Patricia Dippo, Jian V. Li, Karen Bowers, Bobby To, Clay Dehart, Kannan Ramanathan

Research output: Contribution to journalArticlepeer-review

7 Scopus Citations


In this study, we incorporated Sb into the precursor that was subsequently converted to Cu(In,Ga)Se2 (CIGS) by a selenization process. We observed enhanced grain size and improved device performance compared with similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to explore the changes in native defect compensation and evaluate the origin of a lower energy PL peak that is not typically seen in CIGS.

Original languageAmerican English
Article number7234835
Pages (from-to)1769-1774
Number of pages6
JournalIEEE Journal of Photovoltaics
Issue number6
StatePublished - 2015

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/JA-5K00-64376


  • Admittance spectroscopy
  • Cu(In
  • defects
  • Ga)Se(CIGS)
  • photoluminescence
  • photovoltaic cells
  • Sb doping
  • thin films


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