Optoelectronic Properties of Plasma CVD a-Si:H Modified by Filament-Generated Atomic H

Optoelectronic Properties of Plasma CVD a-Si:H Modified by Filament-Generated Atomic H

Research output: Contribution to conference › Paper

Original language	American English
Pages	57-62
Number of pages	6
State	Published - 1992
Event	Amorphous Silicon Technology - 1992: Materials Research Society Symposium - San Francisco, California Duration: 27 Apr 1992 → 1 May 1992

Conference

Conference	Amorphous Silicon Technology - 1992: Materials Research Society Symposium
City	San Francisco, California
Period	27/04/92 → 1/05/92

Bibliographical note

Work performed by Pennsylvania State University, University Park, Pennsylvania

NREL Publication Number

ACNR/CP-14613

Cite this

@conference{e4d1d2066f49436c8d56bc808d0208ca,

title = "Optoelectronic Properties of Plasma CVD a-Si:H Modified by Filament-Generated Atomic H",

author = "NREL",

note = "Work performed by Pennsylvania State University, University Park, Pennsylvania; Amorphous Silicon Technology - 1992: Materials Research Society Symposium ; Conference date: 27-04-1992 Through 01-05-1992",

year = "1992",

language = "American English",

pages = "57--62",

}

TY - CONF

T1 - Optoelectronic Properties of Plasma CVD a-Si:H Modified by Filament-Generated Atomic H

AU - NREL, null

N1 - Work performed by Pennsylvania State University, University Park, Pennsylvania

PY - 1992

Y1 - 1992

M3 - Paper

SP - 57

EP - 62

T2 - Amorphous Silicon Technology - 1992: Materials Research Society Symposium

Y2 - 27 April 1992 through 1 May 1992

ER -