Abstract
GaxIn1-xP alloys grown by metalorganic vapor phase epitaxy (MOVPE) are known to exhibit spontaneous long-range ordering that results in a modification of the alloy electronic band structure. Using time resolved and time integrated photoluminescence studies at 9 K, we demonstrate that the change in alloy ordering in GaxIn1-xP alloys can transform the conduction to valence band optical transition from direct to indirect for a given Ga concentration. This finding may enable sequential growth of alternate layers of high bandgap direct and indirect semiconductor alloys with similar lattice constants, opening various possibilities for device applications.
Original language | American English |
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Article number | 114909 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 106 |
Issue number | 11 |
DOIs | |
State | Published - 2009 |
NREL Publication Number
- NREL/JA-590-46658
Keywords
- basic sciences
- materials science