Ordering Induced Direct-Indirect Transformation in Unstrained GaxIn1-xP for 0.76<=x<=0.78

L. Bhusal, B. Fluegel, M. A. Steiner, A. Mascarenhas

Research output: Contribution to journalArticlepeer-review

5 Scopus Citations


GaxIn1-xP alloys grown by metalorganic vapor phase epitaxy (MOVPE) are known to exhibit spontaneous long-range ordering that results in a modification of the alloy electronic band structure. Using time resolved and time integrated photoluminescence studies at 9 K, we demonstrate that the change in alloy ordering in GaxIn1-xP alloys can transform the conduction to valence band optical transition from direct to indirect for a given Ga concentration. This finding may enable sequential growth of alternate layers of high bandgap direct and indirect semiconductor alloys with similar lattice constants, opening various possibilities for device applications.

Original languageAmerican English
Article number114909
Number of pages3
JournalJournal of Applied Physics
Issue number11
StatePublished - 2009

NREL Publication Number

  • NREL/JA-590-46658


  • basic sciences
  • materials science


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