Organic Light Emitting Diodes Using a Ga:ZnO Anode

J. J. Berry; D. S. Ginley; P. E. Burrows

doi:10.1063/1.2917565

Organic Light Emitting Diodes Using a Ga:ZnO Anode

J. J. Berry, D. S. Ginley, P. E. Burrows

Materials, Chemical, and Computational Science

Research output: Contribution to journal › Article › peer-review

116 Scopus Citations

Abstract

We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are compared. Relative to ITO, the GZO anodes have a slightly better sheet resistance and transparency in the visible spectral region. Device data suggest that GZO effectively injects holes into an aromatic triamine hole transporting layer. Indium-free anodes such as GZO are expected to improve OLED stability while lowering the cost per unit area, which is crucial for OLED based lighting applications.

Original language	American English
Article number	Article No. 193304
Number of pages	3
Journal	Applied Physics Letters
Volume	92
Issue number	19
DOIs	https://doi.org/10.1063/1.2917565 https://doi.org/10.1063/1.2917565
State	Published - 2008

NREL Publication Number

NREL/JA-520-43764

Keywords

anodes
device degradation
transparent conducting oxides

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abstract = "We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are compared. Relative to ITO, the GZO anodes have a slightly better sheet resistance and transparency in the visible spectral region. Device data suggest that GZO effectively injects holes into an aromatic triamine hole transporting layer. Indium-free anodes such as GZO are expected to improve OLED stability while lowering the cost per unit area, which is crucial for OLED based lighting applications.",

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N2 - We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are compared. Relative to ITO, the GZO anodes have a slightly better sheet resistance and transparency in the visible spectral region. Device data suggest that GZO effectively injects holes into an aromatic triamine hole transporting layer. Indium-free anodes such as GZO are expected to improve OLED stability while lowering the cost per unit area, which is crucial for OLED based lighting applications.

AB - We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are compared. Relative to ITO, the GZO anodes have a slightly better sheet resistance and transparency in the visible spectral region. Device data suggest that GZO effectively injects holes into an aromatic triamine hole transporting layer. Indium-free anodes such as GZO are expected to improve OLED stability while lowering the cost per unit area, which is crucial for OLED based lighting applications.

KW - anodes

KW - device degradation

KW - transparent conducting oxides

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - Article No. 193304

ER -

Organic Light Emitting Diodes Using a Ga:ZnO Anode

Abstract

NREL Publication Number

Keywords

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