Organic Light Emitting Diodes Using a Ga:ZnO Anode

J. J. Berry, D. S. Ginley, P. E. Burrows

Research output: Contribution to journalArticlepeer-review

114 Scopus Citations

Abstract

We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are compared. Relative to ITO, the GZO anodes have a slightly better sheet resistance and transparency in the visible spectral region. Device data suggest that GZO effectively injects holes into an aromatic triamine hole transporting layer. Indium-free anodes such as GZO are expected to improve OLED stability while lowering the cost per unit area, which is crucial for OLED based lighting applications.

Original languageAmerican English
Article numberArticle No. 193304
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number19
DOIs
StatePublished - 2008

NREL Publication Number

  • NREL/JA-520-43764

Keywords

  • anodes
  • device degradation
  • transparent conducting oxides

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