Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d0 Semiconductors: Article no. 017201

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NLR Publication Number

@article{565e76daf0cb41ceaee3ca2f2abf12cf,

title = "Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d0 Semiconductors: Article no. 017201",

keywords = "basic sciences, materials science",

author = "Haowei Peng and Shu-Shen Li and Jian-Bai Xia and Jingbo Li and H.J. Xiang and Su-Huai Wei",

year = "2009",

doi = "10.1103/PhysRevLett.102.017201",

language = "American English",

volume = "102",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "1",

}

TY - JOUR

T1 - Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d0 Semiconductors

T2 - Article no. 017201

AU - Peng, Haowei

AU - Li, Shu-Shen

AU - Xia, Jian-Bai

AU - Li, Jingbo

AU - Xiang, H.J.

AU - Wei, Su-Huai

PY - 2009

Y1 - 2009

KW - basic sciences

KW - materials science

U2 - 10.1103/PhysRevLett.102.017201

DO - 10.1103/PhysRevLett.102.017201

M3 - Article

SN - 0031-9007

VL - 102

JO - Physical Review Letters

JF - Physical Review Letters

IS - 1

ER -