Origin of High Electronic Quality in Structurally Disordered CH3NH3PbI3 and the Passivation Effect of Cl and O at Grain Boundaries

Wan-Jian Yin, Suhuai Wei, Hangyan Chen, Tingting Shi, Yanfa Yan

Research output: Contribution to journal › Article › peer-review

193 Scopus Citations

Original language	American English
Journal	Advanced Electronic Materials
Volume	1
Issue number	6
DOIs	https://doi.org/10.1002/aelm.201500044
State	Published - 2015

NREL Publication Number

@article{f887e66957bd42ccbfe075084edbe662,

title = "Origin of High Electronic Quality in Structurally Disordered CH3NH3PbI3 and the Passivation Effect of Cl and O at Grain Boundaries",

keywords = "CH3NH3PbI3, Cl effect, grain boundaries (GBS), passivation, structural disorder",

author = "Wan-Jian Yin and Suhuai Wei and Hangyan Chen and Tingting Shi and Yanfa Yan",

year = "2015",

doi = "10.1002/aelm.201500044",

language = "American English",

volume = "1",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

number = "6",

}

TY - JOUR

T1 - Origin of High Electronic Quality in Structurally Disordered CH3NH3PbI3 and the Passivation Effect of Cl and O at Grain Boundaries

AU - Yin, Wan-Jian

AU - Wei, Suhuai

AU - Chen, Hangyan

AU - Shi, Tingting

AU - Yan, Yanfa

PY - 2015

Y1 - 2015

KW - CH3NH3PbI3

KW - Cl effect

KW - grain boundaries (GBS)

KW - passivation

KW - structural disorder

U2 - 10.1002/aelm.201500044

DO - 10.1002/aelm.201500044

M3 - Article

SN - 2199-160X

VL - 1

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 6

ER -