Origin of the Insulating Behavior of the P-Type LAO/STO Interface: The Polarization-Induced Asymmetric Distribution of Oxygen Vacancies: Article No. 125412

Suhuai Wei

doi:10.1103/PhysRevB.82.125412

Origin of the Insulating Behavior of the P-Type LAO/STO Interface: The Polarization-Induced Asymmetric Distribution of Oxygen Vacancies: Article No. 125412

Suhuai Wei

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	82
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.82.125412
State	Published - 2010

NREL Publication Number

NREL/JA-590-48875

Keywords

carrier density
conductivity

Access to Document

10.1103/PhysRevB.82.125412

Cite this

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title = "Origin of the Insulating Behavior of the P-Type LAO/STO Interface: The Polarization-Induced Asymmetric Distribution of Oxygen Vacancies: Article No. 125412",

keywords = "carrier density, conductivity",

author = "Suhuai Wei",

year = "2010",

doi = "10.1103/PhysRevB.82.125412",

language = "American English",

volume = "82",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "12",

}

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T2 - Article No. 125412

AU - Wei, Suhuai

PY - 2010

Y1 - 2010

KW - carrier density

KW - conductivity

U2 - 10.1103/PhysRevB.82.125412

DO - 10.1103/PhysRevB.82.125412

M3 - Article

SN - 1098-0121

VL - 82

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 12

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