Origin of the Phase Transition of AlN, GaN, and ZnO Nanowires: Article No. 253101

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NLR Publication Number

@article{3a3f518f10e54fe2827f64d1deea7ba3,

title = "Origin of the Phase Transition of AlN, GaN, and ZnO Nanowires: Article No. 253101",

keywords = "II-VI semiconductors, III-V semiconductors, nanorods, nanowires, phase diagrams",

author = "Suhuai Wei",

year = "2009",

doi = "10.1063/1.3159816",

language = "American English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Origin of the Phase Transition of AlN, GaN, and ZnO Nanowires

T2 - Article No. 253101

AU - Wei, Suhuai

PY - 2009

Y1 - 2009

KW - II-VI semiconductors

KW - III-V semiconductors

KW - nanorods

KW - nanowires

KW - phase diagrams

U2 - 10.1063/1.3159816

DO - 10.1063/1.3159816

M3 - Article

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -