Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

Research output: Contribution to conferencePaper


We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, whileactually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by othermethods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.
Original languageAmerican English
Number of pages6
StatePublished - 2013
Event39th IEEE Photovoltiac Specialists Conference - Tampa, Florida
Duration: 16 Jun 201321 Jun 2013


Conference39th IEEE Photovoltiac Specialists Conference
CityTampa, Florida

NREL Publication Number

  • NREL/CP-5200-57902


  • gallium arsenide (GaAs)
  • outdoor performance
  • thin films


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