Oxidation of Tin on Silicon Substrate by Rapid Isothermal Processing

doi:10.1063/1.344271

Oxidation of Tin on Silicon Substrate by Rapid Isothermal Processing

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	2381-2387
Number of pages	7
Journal	Journal of Applied Physics
Volume	66
Issue number	6
DOIs	https://doi.org/10.1063/1.344271
State	Published - 1989

Bibliographical note

Work performed by School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, Oklahoma, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/JA-213-11313

Access to Document

10.1063/1.344271

Cite this

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title = "Oxidation of Tin on Silicon Substrate by Rapid Isothermal Processing",

author = "NREL",

note = "Work performed by School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, Oklahoma, and Solar Energy Research Institute, Golden, Colorado",

year = "1989",

doi = "10.1063/1.344271",

language = "American English",

volume = "66",

pages = "2381--2387",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

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T1 - Oxidation of Tin on Silicon Substrate by Rapid Isothermal Processing

AU - NREL, null

N1 - Work performed by School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, Oklahoma, and Solar Energy Research Institute, Golden, Colorado

PY - 1989

Y1 - 1989

U2 - 10.1063/1.344271

DO - 10.1063/1.344271

M3 - Article

SN - 0021-8979

VL - 66

SP - 2381

EP - 2387

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -