Oxygen in Zone-Melting-Recrystallized Silicon-on-Insulator Films: Its Distribution and Possible Role in Sub-Boundary Formation

John C.C. Fan; B. Y. Tsaur; C. K. Chen; J. R. Dick; L. L. Kazmerski

doi:10.1063/1.94653

Oxygen in Zone-Melting-Recrystallized Silicon-on-Insulator Films: Its Distribution and Possible Role in Sub-Boundary Formation

John C.C. Fan, B. Y. Tsaur, C. K. Chen, J. R. Dick, L. L. Kazmerski

Materials Science

Research output: Contribution to journal › Article › peer-review

15 Scopus Citations

Abstract

Using secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite strip heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO₂ layers.

Original language	American English
Pages (from-to)	1086-1088
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	11
DOIs	https://doi.org/10.1063/1.94653 https://doi.org/10.1063/1.94653
State	Published - 1984

Bibliographical note

Work performed by Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/JA-213-3602

Access to Document

Cite this

@article{59ab9f6d08d0427f91bfa993947ed58f,

title = "Oxygen in Zone-Melting-Recrystallized Silicon-on-Insulator Films: Its Distribution and Possible Role in Sub-Boundary Formation",

abstract = "Using secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite strip heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO2 layers.",

author = "Fan, {John C.C.} and Tsaur, {B. Y.} and Chen, {C. K.} and Dick, {J. R.} and Kazmerski, {L. L.}",

note = "Work performed by Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts and Solar Energy Research Institute, Golden, Colorado",

year = "1984",

doi = "10.1063/1.94653",

language = "American English",

volume = "44",

pages = "1086--1088",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Oxygen in Zone-Melting-Recrystallized Silicon-on-Insulator Films: Its Distribution and Possible Role in Sub-Boundary Formation

AU - Fan, John C.C.

AU - Tsaur, B. Y.

AU - Chen, C. K.

AU - Dick, J. R.

AU - Kazmerski, L. L.

N1 - Work performed by Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts and Solar Energy Research Institute, Golden, Colorado

PY - 1984

Y1 - 1984

N2 - Using secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite strip heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO2 layers.

AB - Using secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite strip heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO2 layers.

UR - http://www.scopus.com/inward/record.url?scp=0021450780&partnerID=8YFLogxK

U2 - 10.1063/1.94653

DO - 10.1063/1.94653

M3 - Article

AN - SCOPUS:0021450780

SN - 0003-6951

VL - 44

SP - 1086

EP - 1088

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Oxygen in Zone-Melting-Recrystallized Silicon-on-Insulator Films: Its Distribution and Possible Role in Sub-Boundary Formation

Abstract

Bibliographical note

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this