P-Induced Nanocrystallite Dispersion in Amorphous-Nanocrystalline Mixed-Phase Si:H Thin Films

C. S. Jiang, B. Yan, Y. Yan, C. W. Teplin, R. Reedy, H. R. Moutinho, M. M. Al-Jassim, J. Yang

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10 Scopus Citations


The effects of P doping on the nanocrystalline formation in mixed-phase Si:H thin films were investigated using secondary-ion mass spectrometry, Raman spectroscopy, atomic force microscopy, cross-sectional transmission electron microscopy, and scanning Kelvin probe microscopy. We found that Si nanocrystallites in the intrinsic and weakly P-doped materials aggregate to form cone-shaped structures. The local workfunction of the nanocrystalline aggregation areas is larger than the surrounding amorphous areas. Increasing the P-doping level requires an increased hydrogen dilution to reach the similar Raman crystallinity. The nanocrystalline aggregation disappears in the heavily P-doped materials, but isolated nancrystallites appear. The effect of P-doping on the nanostructure is explained with the coverage of P-related radicals on the existing nanocrystalline surface during the deposition and the P segregation in grain boundaries, which prevent new nucleation on the surface of existing nanocrystallites.

Original languageAmerican English
Article numberArticle No. 063515
Number of pages6
JournalJournal of Applied Physics
Issue number6
StatePublished - 2008

NREL Publication Number

  • NREL/JA-520-41577


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