P-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas

X. Li, Y. Yan, T. A. Gessert, C. DeHart, C. L. Perkins, D. Young, T. J. Coutts

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85 Scopus Citations


We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being ∼3 atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from 1.0 × 1015 to 1.0 × 1018 cm-3 and the mobility is approximately 10-1 cm2 V-1 s-1. The minimum film resistivity achieved is ∼20 Ω cm.

Original languageAmerican English
Pages (from-to)C56-C58
JournalElectrochemical and Solid-State Letters
Issue number4
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-32142


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