P-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas

X. Li; Y. Yan; T. A. Gessert; C. DeHart; C. L. Perkins; D. Young; T. J. Coutts

doi:10.1149/1.1554292

P-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas

X. Li, Y. Yan, T. A. Gessert, C. DeHart, C. L. Perkins, D. Young, T. J. Coutts

National Renewable Energy Laboratory

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Abstract

We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being ∼3 atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from 1.0 × 10¹⁵ to 1.0 × 10¹⁸ cm^-3 and the mobility is approximately 10^-1 cm² V^-1 s^-1. The minimum film resistivity achieved is ∼20 Ω cm.

Original language	American English
Pages (from-to)	C56-C58
Journal	Electrochemical and Solid-State Letters
Volume	6
Issue number	4
DOIs	https://doi.org/10.1149/1.1554292 https://doi.org/10.1149/1.1554292
State	Published - 2003

NREL Publication Number

NREL/JA-520-32142

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title = "P-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas",

abstract = "We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being ∼3 atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from 1.0 × 1015 to 1.0 × 1018 cm-3 and the mobility is approximately 10-1 cm2 V-1 s-1. The minimum film resistivity achieved is ∼20 Ω cm.",

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TY - JOUR

T1 - P-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas

AU - Li, X.

AU - Yan, Y.

AU - Gessert, T. A.

AU - DeHart, C.

AU - Perkins, C. L.

AU - Young, D.

AU - Coutts, T. J.

PY - 2003

Y1 - 2003

N2 - We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being ∼3 atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from 1.0 × 1015 to 1.0 × 1018 cm-3 and the mobility is approximately 10-1 cm2 V-1 s-1. The minimum film resistivity achieved is ∼20 Ω cm.

AB - We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being ∼3 atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from 1.0 × 1015 to 1.0 × 1018 cm-3 and the mobility is approximately 10-1 cm2 V-1 s-1. The minimum film resistivity achieved is ∼20 Ω cm.

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P-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas

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