p-Type ZnO Thin Films Grown by MOCVD

Research output: Contribution to conferencePaper

Abstract

ZnO has demonstrated a possibility to be doped as a p-type by using nitrogen and other group-V elements. A high nitrogen doping concentration by metalorganic chemical vapor deposition (MOCVD) with nitric oxide (NO) gas has been achieved. However, the processing window for obtaining the p-type ZnO:N film is very narrow, and the hole concentration is typically low. Possible compensation andpassivation effects have been studied. Hydrogen and carbon elements are detected by secondary-ion mass spectroscopy (SIMS). Considering the other experimental and modeling results, we believe that the impurities inadvertently incorporated with the zinc precursor could be compensating or passivating the nitrogen acceptor and result in the low hole concentration.
Original languageAmerican English
Number of pages7
StatePublished - 2005
Event31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida
Duration: 3 Jan 20057 Jan 2005

Conference

Conference31st IEEE Photovoltaics Specialists Conference and Exhibition
CityLake Buena Vista, Florida
Period3/01/057/01/05

NREL Publication Number

  • NREL/CP-520-37378

Keywords

  • metal-organic chemical vapor deposition (MOCVD)
  • nitric oxide (NO)
  • nitrogen doping
  • p-Type
  • PV
  • secondary ion mass spectrometry (SIMS)
  • thin films

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