p-Type ZnO Thin Films Grown by MOCVD

X. Li; S. E. Asher; B. M. Keyes; H. R. Moutinho; J. Luther; T. J. Coutts

p-Type ZnO Thin Films Grown by MOCVD

X. Li, S. E. Asher, B. M. Keyes, H. R. Moutinho, J. Luther, T. J. Coutts

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

4 Scopus Citations

Abstract

ZnO has demonstrated a possibility to be doped as a p-type by using nitrogen and other group-V elements. A high nitrogen doping concentration by metalorganic chemical vapor deposition (MOCVD) with nitric oxide (NO) gas has been achieved. However, the processing window for obtaining the p-type ZnO:N film is very narrow, and the hole concentration is typically low. Possible compensation and passivation effects have been studied. Hydrogen and carbon elements are detected by secondary-ion mass spectroscopy (SIMS). Considering the other experimental and modeling results, we believe that the impurities inadvertently incorporated with the zinc precursor could be compensating or passivating the nitrogen acceptor and result in the low hole concentration.

Original language	American English
Pages	152-154
Number of pages	3
State	Published - 2005
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 3 Jan 2005 → 7 Jan 2005

Conference

Conference	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	3/01/05 → 7/01/05

Bibliographical note

For preprint version see NREL/CP-520-37378

NREL Publication Number

NREL/CP-520-38860

Cite this

@conference{00b95fad2c3c4593a6a61f606400048a,

title = "p-Type ZnO Thin Films Grown by MOCVD",

abstract = "ZnO has demonstrated a possibility to be doped as a p-type by using nitrogen and other group-V elements. A high nitrogen doping concentration by metalorganic chemical vapor deposition (MOCVD) with nitric oxide (NO) gas has been achieved. However, the processing window for obtaining the p-type ZnO:N film is very narrow, and the hole concentration is typically low. Possible compensation and passivation effects have been studied. Hydrogen and carbon elements are detected by secondary-ion mass spectroscopy (SIMS). Considering the other experimental and modeling results, we believe that the impurities inadvertently incorporated with the zinc precursor could be compensating or passivating the nitrogen acceptor and result in the low hole concentration.",

author = "X. Li and Asher, {S. E.} and Keyes, {B. M.} and Moutinho, {H. R.} and J. Luther and Coutts, {T. J.}",

note = "For preprint version see NREL/CP-520-37378; 31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

year = "2005",

language = "American English",

pages = "152--154",

}

TY - CONF

T1 - p-Type ZnO Thin Films Grown by MOCVD

AU - Li, X.

AU - Asher, S. E.

AU - Keyes, B. M.

AU - Moutinho, H. R.

AU - Luther, J.

AU - Coutts, T. J.

N1 - For preprint version see NREL/CP-520-37378

PY - 2005

Y1 - 2005

N2 - ZnO has demonstrated a possibility to be doped as a p-type by using nitrogen and other group-V elements. A high nitrogen doping concentration by metalorganic chemical vapor deposition (MOCVD) with nitric oxide (NO) gas has been achieved. However, the processing window for obtaining the p-type ZnO:N film is very narrow, and the hole concentration is typically low. Possible compensation and passivation effects have been studied. Hydrogen and carbon elements are detected by secondary-ion mass spectroscopy (SIMS). Considering the other experimental and modeling results, we believe that the impurities inadvertently incorporated with the zinc precursor could be compensating or passivating the nitrogen acceptor and result in the low hole concentration.

AB - ZnO has demonstrated a possibility to be doped as a p-type by using nitrogen and other group-V elements. A high nitrogen doping concentration by metalorganic chemical vapor deposition (MOCVD) with nitric oxide (NO) gas has been achieved. However, the processing window for obtaining the p-type ZnO:N film is very narrow, and the hole concentration is typically low. Possible compensation and passivation effects have been studied. Hydrogen and carbon elements are detected by secondary-ion mass spectroscopy (SIMS). Considering the other experimental and modeling results, we believe that the impurities inadvertently incorporated with the zinc precursor could be compensating or passivating the nitrogen acceptor and result in the low hole concentration.

UR - http://www.scopus.com/inward/record.url?scp=27944458808&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:27944458808

SP - 152

EP - 154

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

p-Type ZnO Thin Films Grown by MOCVD

Abstract

Conference

Bibliographical note

NREL Publication Number

Other files and links

Fingerprint

Cite this