p-Type ZnO Thin Films Grown by MOCVD

X. Li, S. E. Asher, B. M. Keyes, H. R. Moutinho, J. Luther, T. J. Coutts

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations


ZnO has demonstrated a possibility to be doped as a p-type by using nitrogen and other group-V elements. A high nitrogen doping concentration by metalorganic chemical vapor deposition (MOCVD) with nitric oxide (NO) gas has been achieved. However, the processing window for obtaining the p-type ZnO:N film is very narrow, and the hole concentration is typically low. Possible compensation and passivation effects have been studied. Hydrogen and carbon elements are detected by secondary-ion mass spectroscopy (SIMS). Considering the other experimental and modeling results, we believe that the impurities inadvertently incorporated with the zinc precursor could be compensating or passivating the nitrogen acceptor and result in the low hole concentration.

Original languageAmerican English
Number of pages3
StatePublished - 2005
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 3 Jan 20057 Jan 2005


Conference31st IEEE Photovoltaic Specialists Conference - 2005
Country/TerritoryUnited States
CityLake Buena Vista, FL

Bibliographical note

For preprint version see NREL/CP-520-37378

NREL Publication Number

  • NREL/CP-520-38860


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