Packaging of an 8-kV Silicon Carbide Diode Module with Double-Side Cooling and Sintered-Silver Joints

Zichen Zhang, Jiaxiang Zhang, Jiayu Xu, Khai Ngo, Guo-Quan Lu, Emily Cousineau, Paul Paret, Sreekant Narumanchi

Research output: Contribution to conferencePaperpeer-review

11 Scopus Citations


Packaging innovations are needed for medium-voltage wide bandgap power semiconductor modules to enable their adaptation in grid applications. A unique challenge for packaging medium-voltage power modules is managing the trade-off between insulation demand and heat dissipation. The focus of this work was on developing a packaging innovation that improves the module heat dissipation and offers more flexibility to its insulation design. Two strategies were explored for the packaging of an 8-kV SiC diode rectifier module:(1) double-side cooling and (2) sintered-silver bonding. Double-side cooling was realized by using short metal posts rather than long and thin wire bonds for device interconnection, forming a low-profile package with devices sandwiched between two insulated metal substrates. Sintered-silver bonding enabled the devices to function reliably at over 250 °C. Simulations of the packaged module showed a low interconnect inductance of 2.67 nH and a 50% less heat transfer coefficient required to cool the chips. Prototypes of the module were fabricated, and preliminary electrical testing results validated the package design.

Original languageAmerican English
Number of pages7
StatePublished - 3 Aug 2021
Event2021 IEEE Electric Ship Technologies Symposium, ESTS 2021 - Arlington, United States
Duration: 3 Aug 20216 Aug 2021


Conference2021 IEEE Electric Ship Technologies Symposium, ESTS 2021
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

NREL Publication Number

  • NREL/CP-5400-80525


  • double-side cooling
  • insulation design
  • Medium-voltage power module
  • sintered-silver bonding
  • thermal management


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