Partial Depletion Region Collapse and Its Impact on Transient Capacitance Measurements

    Research output: Contribution to conferencePaper

    Abstract

    We investigate capacitance transients under various experimental conditions on a number of different amorphous silicon Schottky barrier device structures. The samples differ mainly in their back contact configuration, which is non-ohmic for one type of sample and ohmic for the second type of samples. Anomalous transients can be observed for all samples regardless of the back contact if thedepletion region is only partially collapsed by partial voltage pulsing. We find that samples without an ohmic back contact show a slowly rising capacitance during the filling pulse. These samples show anomalous capacitance transients for short filling pulses.
    Original languageAmerican English
    Pages691-696
    Number of pages6
    StatePublished - 1996
    EventAmorphous Silicon Technology 1996: Materials Research Society Symposium - San Francisco, California
    Duration: 8 Apr 199612 Apr 1996

    Conference

    ConferenceAmorphous Silicon Technology 1996: Materials Research Society Symposium
    CitySan Francisco, California
    Period8/04/9612/04/96

    NREL Publication Number

    • NREL/CP-23008

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