Passivated Contact Formation Using Ion Implantation

David Young (Inventor), Pauls Stradins (Inventor), William Nemeth (Inventor)

Research output: Patent


Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.
Original languageAmerican English
Patent number9,985,159 B2
Filing date29/05/18
StatePublished - 2018

NREL Publication Number

  • NREL/PT-5900-71668


  • carrier recombination
  • energy conversion efficiency
  • passivated contacts
  • photovoltaics
  • surface passivation


Dive into the research topics of 'Passivated Contact Formation Using Ion Implantation'. Together they form a unique fingerprint.

Cite this