Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

Pauls Stradins; William Nemeth; David Young; Andrew Norman; Yuanyue Liu; Emily Warren; Vincenzo LaSalvia; Matthew Page; Ajeet Rohatgi; Stefan Glunz; Jan Benick; Ajay Upadhyaya; Brian Rounsaville; Martin Hermle; Y.-W. Ok; Arrelaine Dameron

Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

Pauls Stradins, William Nemeth, David Young, Andrew Norman, Yuanyue Liu, Emily Warren, Vincenzo LaSalvia, Matthew Page, Ajeet Rohatgi, Stefan Glunz, Jan Benick, Ajay Upadhyaya, Brian Rounsaville, Martin Hermle, Y.-W. Ok, Arrelaine Dameron

Research output: Contribution to conference › Paper

Abstract

We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer areexamined, including transparent n-type oxides and n+-doped poly-Si. SiO2/n+-poly-Si full-area, induced-junction back surface field contacts to n-FZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.

Original language	American English
Number of pages	6
State	Published - 2014
Event	WCPEC-6: 6th World Conference on Photovoltaic Energy Conversion - Kyoto, Japan Duration: 23 Nov 2014 → 27 Nov 2014

Conference

Conference	WCPEC-6: 6th World Conference on Photovoltaic Energy Conversion
City	Kyoto, Japan
Period	23/11/14 → 27/11/14

NREL Publication Number

NREL/CP-5J00-63259

Keywords

boron
N+ doped polysilicon
n-type oxides
passivated contacts
silicon solar cells
tunneling oxide

Access to Document

https://www.nrel.gov/docs/fy15osti/63259.pdf

Cite this

Stradins, P., Nemeth, W., Young, D., Norman, A., Liu, Y., Warren, E., LaSalvia, V., Page, M., Rohatgi, A., Glunz, S., Benick, J., Upadhyaya, A., Rounsaville, B., Hermle, M., Ok, Y.-W., & Dameron, A. (2014). Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint. Paper presented at WCPEC-6: 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan. https://www.nrel.gov/docs/fy15osti/63259.pdf

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title = "Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint",

abstract = "We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer areexamined, including transparent n-type oxides and n+-doped poly-Si. SiO2/n+-poly-Si full-area, induced-junction back surface field contacts to n-FZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.",

keywords = "boron, N+ doped polysilicon, n-type oxides, passivated contacts, silicon solar cells, tunneling oxide",

author = "Pauls Stradins and William Nemeth and David Young and Andrew Norman and Yuanyue Liu and Emily Warren and Vincenzo LaSalvia and Matthew Page and Ajeet Rohatgi and Stefan Glunz and Jan Benick and Ajay Upadhyaya and Brian Rounsaville and Martin Hermle and Y.-W. Ok and Arrelaine Dameron",

year = "2014",

language = "American English",

note = "WCPEC-6: 6th World Conference on Photovoltaic Energy Conversion ; Conference date: 23-11-2014 Through 27-11-2014",

}

Stradins, P , Nemeth, W , Young, D, Norman, A, Liu, Y, Warren, E, LaSalvia, V, Page, M, Rohatgi, A, Glunz, S, Benick, J, Upadhyaya, A, Rounsaville, B, Hermle, M, Ok, Y-W & Dameron, A 2014, 'Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint', Paper presented at WCPEC-6: 6th World Conference on Photovoltaic Energy Conversion, Kyoto, Japan, 23/11/14 - 27/11/14. <https://www.nrel.gov/docs/fy15osti/63259.pdf>

TY - CONF

T1 - Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

AU - Stradins, Pauls

AU - Nemeth, William

AU - Young, David

AU - Norman, Andrew

AU - Liu, Yuanyue

AU - Warren, Emily

AU - LaSalvia, Vincenzo

AU - Page, Matthew

AU - Rohatgi, Ajeet

AU - Glunz, Stefan

AU - Benick, Jan

AU - Upadhyaya, Ajay

AU - Rounsaville, Brian

AU - Hermle, Martin

AU - Ok, Y.-W.

AU - Dameron, Arrelaine

PY - 2014

Y1 - 2014

N2 - We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer areexamined, including transparent n-type oxides and n+-doped poly-Si. SiO2/n+-poly-Si full-area, induced-junction back surface field contacts to n-FZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.

AB - We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer areexamined, including transparent n-type oxides and n+-doped poly-Si. SiO2/n+-poly-Si full-area, induced-junction back surface field contacts to n-FZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.

KW - boron

KW - N+ doped polysilicon

KW - n-type oxides

KW - passivated contacts

KW - silicon solar cells

KW - tunneling oxide

M3 - Paper

T2 - WCPEC-6: 6th World Conference on Photovoltaic Energy Conversion

Y2 - 23 November 2014 through 27 November 2014

ER -

Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

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Cite this