Passivation of Deep Electronic States of Partial Dislocations in GaAs: A Theoretical Study

Su-Huai Wei; W.E. McMahon; Lixin Zhang

doi:10.1063/1.3364140

Passivation of Deep Electronic States of Partial Dislocations in GaAs: A Theoretical Study

Su-Huai Wei, W.E. McMahon, Lixin Zhang

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	12
DOIs	https://doi.org/10.1063/1.3364140
State	Published - 2010

NREL Publication Number

NREL/JA-590-46868

Keywords

passivation
semiconductors
zincblende

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10.1063/1.3364140

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title = "Passivation of Deep Electronic States of Partial Dislocations in GaAs: A Theoretical Study",

keywords = "passivation, semiconductors, zincblende",

author = "Su-Huai Wei and W.E. McMahon and Lixin Zhang",

year = "2010",

doi = "10.1063/1.3364140",

language = "American English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Passivation of Deep Electronic States of Partial Dislocations in GaAs: A Theoretical Study

AU - Wei, Su-Huai

AU - McMahon, W.E.

AU - Zhang, Lixin

PY - 2010

Y1 - 2010

KW - passivation

KW - semiconductors

KW - zincblende

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U2 - 10.1063/1.3364140

DO - 10.1063/1.3364140

M3 - Article

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Passivation of Deep Electronic States of Partial Dislocations in GaAs: A Theoretical Study

NREL Publication Number

Keywords

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