Passivation of Interfaces in High-Efficiency Photovoltaic Devices

    Research output: Contribution to conferencePaper


    Solar cells made from III-V materials have achieved efficiencies greater than 30%. Effectively ideal passivation plays an important role in achieving these high efficiencies. Standard modeling techniques are applied to Ga0.5In0.5P solar cells to show the effects of passivation. Accurate knowledge of the absorption coefficient is essential (see appendix). Although ultralow (<2 cm/s) interfacerecombination velocities have been reported, in practice, it is difficult to achieve such low recombination velocities in solar cells because the doping levels are high and because of accidental incorporation of impurities and dopant diffusion. Examples are given of how dopant diffusion can both help and hinder interface passivation, and of how incorporation of oxygen or hydrogen can causeproblems.
    Original languageAmerican English
    Number of pages18
    StatePublished - 1999
    EventMRS Spring Meeting - San Francisco, California
    Duration: 5 Apr 19999 Apr 1999


    ConferenceMRS Spring Meeting
    CitySan Francisco, California

    NREL Publication Number

    • NREL/CP-520-26494


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