Pathway to Oxide Photovoltaics via Band-Structure Engineering of SnO: Article No. 106103

Research output: Contribution to journalArticlepeer-review

27 Scopus Citations

Abstract

All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical properties were developed. SnO has exceptional doping and transport properties among oxides, but suffers from a strongly indirect band gap. Here, we address this shortcoming by band-structure engineering through isovalent but heterostructural alloying with divalent cations (Mg, Ca, Sr, and Zn). Using first-principles calculations, we show that suitable band gaps and optical properties close to that of direct semiconductors are achievable, while the comparatively small effective masses are preserved in the alloys. Initial thin film synthesis and characterization support the feasibility of the approach.
Original languageAmerican English
Number of pages9
JournalAPL Materials
Volume4
Issue number10
DOIs
StatePublished - 2016

NREL Publication Number

  • NREL/JA-5K00-67309

Keywords

  • absorption spectra
  • alloys
  • band structure
  • photonic bandgap materials
  • zinc

Fingerprint

Dive into the research topics of 'Pathway to Oxide Photovoltaics via Band-Structure Engineering of SnO: Article No. 106103'. Together they form a unique fingerprint.

Cite this