Pathways Toward Higher Performance CdS/CdTe Devices: Te Exposure of CdTe Surface before ZnTe:Cu/Te Contacting

T. A. Gessert, J. M. Burst, S. H. Wei, J. Ma, D. Kuciauskas, W. L. Rance, T. M. Barnes, J. N. Duenow, M. O. Reese, J. V. Li, M. R. Young, P. Dippo

Research output: Contribution to journalArticlepeer-review

15 Scopus Citations

Abstract

Many studies of thin-film CdS/CdTe photovoltaic devices have suggested that performance may be improved by reducing recombination due to Te-vacancy (V Te), Te antisite (TeCd), or Te-interstitial (Te i) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it may be also coupled to the formation of beneficial cadmium vacancy (VCd) defects. In this study, we expose the CdTe surface to Te vapor prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing VTe without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuxTe or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of VTe (e.g., oxygen and chlorine additions), adding even a small amount of Te may produce detrimental defects.

Original languageAmerican English
Pages (from-to)237-240
Number of pages4
JournalThin Solid Films
Volume535
Issue number1
DOIs
StatePublished - 15 May 2013

NREL Publication Number

  • NREL/JA-5500-55108

Keywords

  • CdTe
  • Contacts
  • Stoichiometry
  • ZnTe

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