Patterned Nanochannel Sacrificial Layer for Semiconductor Substrate Reuse

John Mangum (Inventor), William McMahon (Inventor), Emily Warren (Inventor), San Theingi (Inventor)

Research output: Patent


Described herein are systems and methods of utilizing nanochannels generated in the sacrificial layer of a semiconductor substrate to increase epitaxial lift-off speeds and facilitate reusability of GaAs substrates. The provided systems and methods may utilize unique nanochannel geometries to increase the surface area exposed to the etchant and further decrease etch times.
Original languageAmerican English
Patent number11,830,733 B2
Filing date28/11/23
StatePublished - 2023

NREL Publication Number

  • NREL/PT-5K00-88191


  • epitaxial lift-off speeds
  • reusability of GaAs substrates
  • sacrificial layer


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