Abstract
PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm2 V-1 s-1 are made by infilling sulfide-capped QD films with amorphous alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations. Partial infilling tunes the electrical characteristics of the FETs.
Original language | American English |
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Pages (from-to) | 1578-1587 |
Number of pages | 10 |
Journal | Nano Letters |
Volume | 13 |
Issue number | 4 |
DOIs | |
State | Published - 10 Apr 2013 |
NREL Publication Number
- NREL/JA-5200-58660
Keywords
- field-effect transistors
- lead selenide
- nanocrystals
- Quantum dots
- solar cells