PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm2 V-1 s-1

Yao Liu, Jason Tolentino, Markelle Gibbs, Rachelle Ihly, Craig L. Perkins, Yu Liu, Nathan Crawford, John C. Hemminger, Matt Law

Research output: Contribution to journalArticlepeer-review

217 Scopus Citations

Abstract

PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm2 V-1 s-1 are made by infilling sulfide-capped QD films with amorphous alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations. Partial infilling tunes the electrical characteristics of the FETs.

Original languageAmerican English
Pages (from-to)1578-1587
Number of pages10
JournalNano Letters
Volume13
Issue number4
DOIs
StatePublished - 10 Apr 2013

NREL Publication Number

  • NREL/JA-5200-58660

Keywords

  • field-effect transistors
  • lead selenide
  • nanocrystals
  • Quantum dots
  • solar cells

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