Performance of Copper-Ternary Based Thin-Film Solar Cells

L. L. Kazmerski; P. J. Ireland; F. R. White; R. B. Cooper

Performance of Copper-Ternary Based Thin-Film Solar Cells

L. L. Kazmerski, P. J. Ireland, F. R. White, R. B. Cooper

Unknown

Research output: Contribution to conference › Paper › peer-review

24 Scopus Citations

Abstract

The performance of a Cu-ternary thin-film photovoltaic device, with some emphasis on the CdS/CuInSe//2 solar cell, is examined. A model for this heterostructure is presented and correlated with reported device performances. Attainable properties and producible electrical, optical, and structural characteristics are predicted. Temperature dependences of V//o//c and j//o are used to determine electron affinity difference and interface recombination velocity, respectively. Dark capacitance-voltage data are presented for the CdS/CuInSe//2 device and diffusion voltages are reported. Heterojunction band diagrams are given for present and optimized device situations.

Original language	American English
Pages	184-189
Number of pages	6
State	Published - 1978
Externally published	Yes
Event	Conf Rec IEEE Photovoltaic Spec Conf 13th - Washington, DC, USA Duration: 5 Jun 1978 → 8 Jun 1978

Conference

Conference	Conf Rec IEEE Photovoltaic Spec Conf 13th
City	Washington, DC, USA
Period	5/06/78 → 8/06/78

NREL Publication Number

ACNR/CP-213-3333

Cite this

@conference{169e8b0b567b4041abb3bb840970d6ea,

title = "Performance of Copper-Ternary Based Thin-Film Solar Cells",

abstract = "The performance of a Cu-ternary thin-film photovoltaic device, with some emphasis on the CdS/CuInSe//2 solar cell, is examined. A model for this heterostructure is presented and correlated with reported device performances. Attainable properties and producible electrical, optical, and structural characteristics are predicted. Temperature dependences of V//o//c and j//o are used to determine electron affinity difference and interface recombination velocity, respectively. Dark capacitance-voltage data are presented for the CdS/CuInSe//2 device and diffusion voltages are reported. Heterojunction band diagrams are given for present and optimized device situations.",

author = "Kazmerski, {L. L.} and Ireland, {P. J.} and White, {F. R.} and Cooper, {R. B.}",

year = "1978",

language = "American English",

pages = "184--189",

note = "Conf Rec IEEE Photovoltaic Spec Conf 13th ; Conference date: 05-06-1978 Through 08-06-1978",

}

TY - CONF

T1 - Performance of Copper-Ternary Based Thin-Film Solar Cells

AU - Kazmerski, L. L.

AU - Ireland, P. J.

AU - White, F. R.

AU - Cooper, R. B.

PY - 1978

Y1 - 1978

N2 - The performance of a Cu-ternary thin-film photovoltaic device, with some emphasis on the CdS/CuInSe//2 solar cell, is examined. A model for this heterostructure is presented and correlated with reported device performances. Attainable properties and producible electrical, optical, and structural characteristics are predicted. Temperature dependences of V//o//c and j//o are used to determine electron affinity difference and interface recombination velocity, respectively. Dark capacitance-voltage data are presented for the CdS/CuInSe//2 device and diffusion voltages are reported. Heterojunction band diagrams are given for present and optimized device situations.

AB - The performance of a Cu-ternary thin-film photovoltaic device, with some emphasis on the CdS/CuInSe//2 solar cell, is examined. A model for this heterostructure is presented and correlated with reported device performances. Attainable properties and producible electrical, optical, and structural characteristics are predicted. Temperature dependences of V//o//c and j//o are used to determine electron affinity difference and interface recombination velocity, respectively. Dark capacitance-voltage data are presented for the CdS/CuInSe//2 device and diffusion voltages are reported. Heterojunction band diagrams are given for present and optimized device situations.

UR - http://www.scopus.com/inward/record.url?scp=0018050692&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0018050692

SP - 184

EP - 189

T2 - Conf Rec IEEE Photovoltaic Spec Conf 13th

Y2 - 5 June 1978 through 8 June 1978

ER -

Performance of Copper-Ternary Based Thin-Film Solar Cells

Abstract

Conference

NREL Publication Number

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