Performance of Copper-Ternary Based Thin-Film Solar Cells

L. L. Kazmerski, P. J. Ireland, F. R. White, R. B. Cooper

Research output: Contribution to conferencePaperpeer-review

24 Scopus Citations


The performance of a Cu-ternary thin-film photovoltaic device, with some emphasis on the CdS/CuInSe//2 solar cell, is examined. A model for this heterostructure is presented and correlated with reported device performances. Attainable properties and producible electrical, optical, and structural characteristics are predicted. Temperature dependences of V//o//c and j//o are used to determine electron affinity difference and interface recombination velocity, respectively. Dark capacitance-voltage data are presented for the CdS/CuInSe//2 device and diffusion voltages are reported. Heterojunction band diagrams are given for present and optimized device situations.

Original languageAmerican English
Number of pages6
StatePublished - 1978
Externally publishedYes
EventConf Rec IEEE Photovoltaic Spec Conf 13th - Washington, DC, USA
Duration: 5 Jun 19788 Jun 1978


ConferenceConf Rec IEEE Photovoltaic Spec Conf 13th
CityWashington, DC, USA

NREL Publication Number

  • ACNR/CP-213-3333


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