Performance of Copper-Ternary Based Thin-Film Solar Cells

The performance of a Cu-ternary thin-film photovoltaic device, with some emphasis on the CdS/CuInSe//2 solar cell, is examined. A model for this heterostructure is presented and correlated with reported device performances. Attainable properties and producible electrical, optical, and structural characteristics are predicted. Temperature dependences of V//o//c and j//o are used to determine electron affinity difference and interface recombination velocity, respectively. Dark capacitance-voltage data are presented for the CdS/CuInSe//2 device and diffusion voltages are reported. Heterojunction band diagrams are given for present and optimized device situations.