Abstract
Atomic-scale understanding and control of dislocation cores is of great technological importance, because they act as recombination centers for charge carriers in optoelectronic devices. Using hybrid density-functional calculations, we present period-doubling reconstructions of a 90° partial dislocation in GaAs, for which the periodicity of like-atom dimers along the dislocation line varies from one to two, to four dimers. The electronic properties of a dislocation change drastically with each period doubling. The dimers in the single-period dislocation are able to interact, to form a dispersive one-dimensional band with deep-gap states. However, the inter-dimer interaction for the double-period dislocation becomes significantly reduced; hence, it is free of mid-gap states. The Ga core undergoes a further period-doubling transition to a quadruple-period reconstruction induced by the formation of small hole polarons. The competition between these dislocation phases suggests a new passivation strategy via population manipulation of the detrimental single-period phase.
Original language | American English |
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Article number | e216 |
Number of pages | 6 |
Journal | NPG Asia Materials |
Volume | 7 |
Issue number | 9 |
DOIs | |
State | Published - 11 Sep 2015 |
Bibliographical note
Publisher Copyright:© 2015 Nature Publishing Group All rights reserved.
NREL Publication Number
- NREL/JA-5J00-63881
Keywords
- ab initio calculations
- deep levels
- dislocations
- gallium arsenide
- passivation
- reconstruction