Period-Doubling Reconstructions of Semiconductor Partial Dislocations: Article No. e216

William McMahon, Suhuai Wei, Joongoo Kang, Bing Huang, Ji-Sang Park

Research output: Contribution to journalArticlepeer-review

12 Scopus Citations
Original languageAmerican English
Number of pages6
JournalNPG Asia Materials
Volume7
Issue number9
DOIs
StatePublished - 2015

NREL Publication Number

  • NREL/JA-5J00-63881

Keywords

  • ab initio calculations
  • deep levels
  • dislocations
  • gallium arsenide
  • passivation
  • reconstruction

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