Persistent Photoconductivity in Ga1-xInxNyAs1-y

J. Z. Li; J. Y. Lin; H. X. Jiang; J. F. Geisz; Sarah R. Kurtz

doi:10.1063/1.124865

Persistent Photoconductivity in Ga1-xInxNyAs1-y

J. Z. Li, J. Y. Lin, H. X. Jiang, J. F. Geisz, Sarah R. Kurtz

Kansas State University

Research output: Contribution to journal › Article › peer-review

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Abstract

MOCVD grown GaInNAs quaternary alloys are investigated based on persistent photoconductivity (PPC) effects using Hall effect and PC measurements. It is shown that a stretched-exponential function is being followed by the PPC decay. This PPC effect is studied to be caused by lattice-relaxed deep level-like centers.

Original language	American English
Pages (from-to)	1899-1901
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	13
DOIs	https://doi.org/10.1063/1.124865 https://doi.org/10.1063/1.124865
State	Published - 1999

NREL Publication Number

NREL/JA-520-27879

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title = "Persistent Photoconductivity in Ga1-xInxNyAs1-y",

abstract = "MOCVD grown GaInNAs quaternary alloys are investigated based on persistent photoconductivity (PPC) effects using Hall effect and PC measurements. It is shown that a stretched-exponential function is being followed by the PPC decay. This PPC effect is studied to be caused by lattice-relaxed deep level-like centers.",

author = "Li, {J. Z.} and Lin, {J. Y.} and Jiang, {H. X.} and Geisz, {J. F.} and Kurtz, {Sarah R.}",

year = "1999",

doi = "10.1063/1.124865",

language = "American English",

volume = "75",

pages = "1899--1901",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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AU - Li, J. Z.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Geisz, J. F.

AU - Kurtz, Sarah R.

PY - 1999

Y1 - 1999

N2 - MOCVD grown GaInNAs quaternary alloys are investigated based on persistent photoconductivity (PPC) effects using Hall effect and PC measurements. It is shown that a stretched-exponential function is being followed by the PPC decay. This PPC effect is studied to be caused by lattice-relaxed deep level-like centers.

AB - MOCVD grown GaInNAs quaternary alloys are investigated based on persistent photoconductivity (PPC) effects using Hall effect and PC measurements. It is shown that a stretched-exponential function is being followed by the PPC decay. This PPC effect is studied to be caused by lattice-relaxed deep level-like centers.

UR - http://www.scopus.com/inward/record.url?scp=0032614087&partnerID=8YFLogxK

U2 - 10.1063/1.124865

DO - 10.1063/1.124865

M3 - Article

AN - SCOPUS:0032614087

SN - 0003-6951

VL - 75

SP - 1899

EP - 1901

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Persistent Photoconductivity in Ga1-xInxNyAs1-y

Abstract

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