Perspective of GaAs1-xNx and GaPxN1-x as Heavily Doped Semiconductors

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	243-252
Number of pages	10
Journal	Physica Status Solidi (B) Basic Research
Volume	228
DOIs	https://doi.org/10.1002/1521-3951(200111)228:1<243::AID-PSSB243>3.0.CO;2-Z
State	Published - 2001

NREL Publication Number

@article{5aa647fb3fac411e834cbe2e3f03a35a,

title = "Perspective of GaAs1-xNx and GaPxN1-x as Heavily Doped Semiconductors",

author = "NREL",

year = "2001",

doi = "10.1002/1521-3951(200111)228:1<243::AID-PSSB243>3.0.CO;2-Z",

language = "American English",

volume = "228",

pages = "243--252",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

}

TY - JOUR

T1 - Perspective of GaAs1-xNx and GaPxN1-x as Heavily Doped Semiconductors

AU - NREL, null

PY - 2001

Y1 - 2001

U2 - 10.1002/1521-3951(200111)228:1<243::AID-PSSB243>3.0.CO;2-Z

DO - 10.1002/1521-3951(200111)228:1<243::AID-PSSB243>3.0.CO;2-Z

M3 - Article

SN - 0370-1972

VL - 228

SP - 243

EP - 252

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

ER -