Abstract
Phase control is critical for achieving high-performance CdTe cells when CuxTe is used as a back-contact for CdTe cells. CuxTe phases are mainly controlled by the Cu/Te ratio, and they can also be affected by post-heat-treatment temperature. Although Cu2Te has the highest conductivity, it is unstable and provides more Cu diffusion into the CdS and CdTe films. Cu diffusion into the CdS causes "cross-over", and Cu diffusion into the CdTe film creates Cu-related defects that lower photogenerated carrier lifetime and result in voltage-dependent collection. A "recontact" experiment clearly indicated that the mechanism giving rise to "roll-over" is the formation of Cu-related oxides, rather than the loss of Cu on the back-contact.
Original language | American English |
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Pages (from-to) | 5798-5803 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 515 |
Issue number | 15 |
DOIs | |
State | Published - 2007 |
NREL Publication Number
- NREL/JA-520-40021
Keywords
- Back-contact
- Cadmium telluride
- Copper telluride