Phase Separation and Facet Formation During the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy

Research output: Contribution to conference › Paper

Original language	American English
Pages	171-174
Number of pages	4
State	Published - 1999
Event	Microscopy of Semiconducting Materials 1999: Institute of Physics Conference - Oxford University, United Kingdom Duration: 22 Mar 1999 → 25 Mar 1999

Conference	Microscopy of Semiconducting Materials 1999: Institute of Physics Conference
City	Oxford University, United Kingdom
Period	22/03/99 → 25/03/99

NREL Publication Number

@conference{a0d2c827e78a406bb7cf85c9838a7ca2,

title = "Phase Separation and Facet Formation During the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy",

author = "NREL",

year = "1999",

language = "American English",

pages = "171--174",

note = "Microscopy of Semiconducting Materials 1999: Institute of Physics Conference ; Conference date: 22-03-1999 Through 25-03-1999",

}