Phase Separation and Facet Formation during the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy

Research output: Contribution to conferencePaper

Abstract

Metal organic vapour phase epitaxy (GaAs)1-x (Ge2 )x alloy layers, 0<x<0.22,; were grown at temperatures between 640? and 690?C, on vicinal (001) GaAs substrates. Phase separation occurred in all the layers. The phase-separated microstructure changed with alloy composition, growth temperature, and substrate orientation. In x 0.1 layers grown at 640?C, Ge segregation occurred on {115}B planesassociated with a {115}B surface faceting. Increase in growth temperature led to the formation of large, (001)-oriented, irregular-shaped platelets of Ge-rich material. Growth on {115}B substrates resulted in a 'natural superlattice' of GaAs/Ge along the growth direction.
Original languageAmerican English
Number of pages6
StatePublished - 1999
EventMicroscopy of Semiconducting Materials XI - Oxford, United Kingdom
Duration: 22 Mar 199925 Mar 1999

Conference

ConferenceMicroscopy of Semiconducting Materials XI
CityOxford, United Kingdom
Period22/03/9925/03/99

NREL Publication Number

  • NREL/CP-520-26319

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