Abstract
Metal organic vapour phase epitaxy (GaAs)1-x (Ge2 )x alloy layers, 0<x<0.22,; were grown at temperatures between 640? and 690?C, on vicinal (001) GaAs substrates. Phase separation occurred in all the layers. The phase-separated microstructure changed with alloy composition, growth temperature, and substrate orientation. In x 0.1 layers grown at 640?C, Ge segregation occurred on {115}B planesassociated with a {115}B surface faceting. Increase in growth temperature led to the formation of large, (001)-oriented, irregular-shaped platelets of Ge-rich material. Growth on {115}B substrates resulted in a 'natural superlattice' of GaAs/Ge along the growth direction.
| Original language | American English |
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| Number of pages | 6 |
| State | Published - 1999 |
| Event | Microscopy of Semiconducting Materials XI - Oxford, United Kingdom Duration: 22 Mar 1999 → 25 Mar 1999 |
Conference
| Conference | Microscopy of Semiconducting Materials XI |
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| City | Oxford, United Kingdom |
| Period | 22/03/99 → 25/03/99 |
NREL Publication Number
- NREL/CP-520-26319