Phosphorus Doping of Polycrystalline CdTe by Diffusion

Eric Colegrove, David Albin, Harvey Guthrey, Helio Moutinho, Stuart Farrell, Mowafak Al-Jassim, Wyatt Metzger, Steven Harvey, James Burst

Research output: Contribution to conferencePaperpeer-review

8 Scopus Citations


Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

Original languageAmerican English
Number of pages6
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015


Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5K00-63612


  • cadmium telluride
  • diffusion photovoltaic cells
  • phosphorus


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