Phosphorus Doping of Polycrystalline CdTe by Diffusion

Eric Colegrove; David Albin; Harvey Guthrey; Helio Moutinho; Stuart Farrell; Mowafak Al-Jassim; Wyatt Metzger; Steven Harvey; James Burst

doi:10.1109/PVSC.2015.7356370

Phosphorus Doping of Polycrystalline CdTe by Diffusion

Eric Colegrove
, David Albin
, Harvey Guthrey
, Helio Moutinho
, Stuart Farrell
, Mowafak Al-Jassim
, Wyatt Metzger
, Steven Harvey
, James Burst

Materials Science

Research output: Contribution to conference › Paper › peer-review

9 Scopus Citations

Abstract

Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

Original language	American English
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2015.7356370 https://doi.org/10.1109/PVSC.2015.7356370
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NLR Publication Number

NREL/CP-5K00-63612

Keywords

cadmium telluride
diffusion photovoltaic cells
phosphorus

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Colegrove, E., Albin, D., Guthrey, H., Moutinho, H., Farrell, S., Al-Jassim, M., Metzger, W., Harvey, S., & Burst, J. (2015). Phosphorus Doping of Polycrystalline CdTe by Diffusion. Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States. https://doi.org/10.1109/PVSC.2015.7356370, https://doi.org/10.1109/PVSC.2015.7356370

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abstract = "Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.",

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author = "Eric Colegrove and David Albin and Harvey Guthrey and Helio Moutinho and Stuart Farrell and Mowafak Al-Jassim and Wyatt Metzger and Steven Harvey and James Burst",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

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Colegrove, E, Albin, D, Guthrey, H, Moutinho, H, Farrell, S, Al-Jassim, M, Metzger, W, Harvey, S & Burst, J 2015, 'Phosphorus Doping of Polycrystalline CdTe by Diffusion', Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15 - 19/06/15. https://doi.org/10.1109/PVSC.2015.7356370, https://doi.org/10.1109/PVSC.2015.7356370

TY - CONF

T1 - Phosphorus Doping of Polycrystalline CdTe by Diffusion

AU - Colegrove, Eric

AU - Albin, David

AU - Guthrey, Harvey

AU - Moutinho, Helio

AU - Farrell, Stuart

AU - Al-Jassim, Mowafak

AU - Metzger, Wyatt

AU - Harvey, Steven

AU - Burst, James

PY - 2015/12/14

Y1 - 2015/12/14

N2 - Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

AB - Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

KW - cadmium telluride

KW - diffusion photovoltaic cells

KW - phosphorus

UR - https://www.scopus.com/pages/publications/84961661737

U2 - 10.1109/PVSC.2015.7356370

DO - 10.1109/PVSC.2015.7356370

M3 - Paper

AN - SCOPUS:84961661737

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Phosphorus Doping of Polycrystalline CdTe by Diffusion

Abstract

Conference

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Keywords

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