Photoassisted Physical Vapor Epitaxial Growth of Semiconductors: A Review of Light-Induced Modifications to Growth Processes: Article No. 023001

Kirstin Alberi, Michael Scarpulla

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6 Scopus Citations

Abstract

Herein, we review the remarkable range of modifications to materials properties associated with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors. We concentrate on mechanisms producing measureable, utilizable changes in crystalline perfection, phase, composition, doping, and defect distribution. We outline the relevant physics of different mechanisms, concentrating on those yielding effects orthogonal to the primary growth variables of temperature and atomic or molecular fluxes and document the phenomenological effects reported. Based on experimental observations from a range of semiconductor systems and growth conditions, the primary effects include enhanced anion desorption, molecular dissociation, increased doping efficiency, modification to defect populations and improvements to the crystalline quality of epilayers grown at low temperatures. Future research directions and technological applications are also discussed.
Original languageAmerican English
Number of pages18
JournalJournal of Physics D: Applied Physics
Volume51
Issue number2
DOIs
StatePublished - 2018

NREL Publication Number

  • NREL/JA-5K00-70146

Keywords

  • epitaxy
  • photoassisted
  • semiconductor

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