Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)

Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)

Research output: Contribution to conference › Paper

Abstract

We present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitativelyfor the magnitude and voltage-dependence of the photocapacitance.

Original language	American English
Pages	723-728
Number of pages	6
State	Published - 1997
Event	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California Duration: 31 Mar 1997 → 4 Apr 1997

Conference

Conference	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
City	San Francisco, California
Period	31/03/97 → 4/04/97

Bibliographical note

Work performed by Syracuse University, Syracuse, New York

NREL Publication Number

NREL/CP-520-24562

Cite this

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title = "Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)",

abstract = "We present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitativelyfor the magnitude and voltage-dependence of the photocapacitance.",

author = "NREL",

note = "Work performed by Syracuse University, Syracuse, New York; Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium ; Conference date: 31-03-1997 Through 04-04-1997",

year = "1997",

language = "American English",

pages = "723--728",

}

TY - CONF

T1 - Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)

AU - NREL, null

N1 - Work performed by Syracuse University, Syracuse, New York

PY - 1997

Y1 - 1997

N2 - We present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitativelyfor the magnitude and voltage-dependence of the photocapacitance.

AB - We present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitativelyfor the magnitude and voltage-dependence of the photocapacitance.

M3 - Paper

SP - 723

EP - 728

T2 - Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium

Y2 - 31 March 1997 through 4 April 1997

ER -

Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this