Photocapacitance of CdZnS/CuInSe2 Thin-Film Heterojunctions

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The photocapacitance of a thin-film CdZnS/CuInSe2 heterojunction was observed under white light excitation. Capacitance increases were observed that were indicative of minority-carrier trapping in the junction. Emission spectroscopy indicated that a distribution of traps produce this signal. Analysis of the data indicate trap distributions ranging from 5×10 14 cm-3 to 1.6×10 15 cm-3 in the bulk and 3.3×1011 cm-2 at the surface. Photovoltaic efficiency was inversely related to the photocapacitance signal. A model relates deep electron interface states to a decrease in open-circuit voltage.

Original languageAmerican English
Pages (from-to)181-185
Number of pages5
JournalJournal of Applied Physics
Issue number1
StatePublished - 1986

NREL Publication Number

  • ACNR/JA-213-7115


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