Photocapacitance of CdZnS/CuInSe2 Thin-Film Heterojunctions

R. K. Ahrenkiel

doi:10.1063/1.336859

Photocapacitance of CdZnS/CuInSe2 Thin-Film Heterojunctions

R. K. Ahrenkiel

Materials Science

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Abstract

The photocapacitance of a thin-film CdZnS/CuInSe₂ heterojunction was observed under white light excitation. Capacitance increases were observed that were indicative of minority-carrier trapping in the junction. Emission spectroscopy indicated that a distribution of traps produce this signal. Analysis of the data indicate trap distributions ranging from 5×10 ¹⁴ cm^-3 to 1.6×10 ¹⁵ cm^-3 in the bulk and 3.3×10¹¹ cm^-2 at the surface. Photovoltaic efficiency was inversely related to the photocapacitance signal. A model relates deep electron interface states to a decrease in open-circuit voltage.

Original language	American English
Pages (from-to)	181-185
Number of pages	5
Journal	Journal of Applied Physics
Volume	59
Issue number	1
DOIs	https://doi.org/10.1063/1.336859 https://doi.org/10.1063/1.336859
State	Published - 1986

NREL Publication Number

ACNR/JA-213-7115

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@article{25b39c001daf441596e914935818cd36,

title = "Photocapacitance of CdZnS/CuInSe2 Thin-Film Heterojunctions",

abstract = "The photocapacitance of a thin-film CdZnS/CuInSe2 heterojunction was observed under white light excitation. Capacitance increases were observed that were indicative of minority-carrier trapping in the junction. Emission spectroscopy indicated that a distribution of traps produce this signal. Analysis of the data indicate trap distributions ranging from 5×10 14 cm-3 to 1.6×10 15 cm-3 in the bulk and 3.3×1011 cm-2 at the surface. Photovoltaic efficiency was inversely related to the photocapacitance signal. A model relates deep electron interface states to a decrease in open-circuit voltage.",

author = "Ahrenkiel, {R. K.}",

year = "1986",

doi = "10.1063/1.336859",

language = "American English",

volume = "59",

pages = "181--185",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Photocapacitance of CdZnS/CuInSe2 Thin-Film Heterojunctions

AU - Ahrenkiel, R. K.

PY - 1986

Y1 - 1986

N2 - The photocapacitance of a thin-film CdZnS/CuInSe2 heterojunction was observed under white light excitation. Capacitance increases were observed that were indicative of minority-carrier trapping in the junction. Emission spectroscopy indicated that a distribution of traps produce this signal. Analysis of the data indicate trap distributions ranging from 5×10 14 cm-3 to 1.6×10 15 cm-3 in the bulk and 3.3×1011 cm-2 at the surface. Photovoltaic efficiency was inversely related to the photocapacitance signal. A model relates deep electron interface states to a decrease in open-circuit voltage.

AB - The photocapacitance of a thin-film CdZnS/CuInSe2 heterojunction was observed under white light excitation. Capacitance increases were observed that were indicative of minority-carrier trapping in the junction. Emission spectroscopy indicated that a distribution of traps produce this signal. Analysis of the data indicate trap distributions ranging from 5×10 14 cm-3 to 1.6×10 15 cm-3 in the bulk and 3.3×1011 cm-2 at the surface. Photovoltaic efficiency was inversely related to the photocapacitance signal. A model relates deep electron interface states to a decrease in open-circuit voltage.

UR - http://www.scopus.com/inward/record.url?scp=0022594905&partnerID=8YFLogxK

U2 - 10.1063/1.336859

DO - 10.1063/1.336859

M3 - Article

AN - SCOPUS:0022594905

SN - 0021-8979

VL - 59

SP - 181

EP - 185

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Photocapacitance of CdZnS/CuInSe2 Thin-Film Heterojunctions

Abstract

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