Photocarrier Drift and Recombination in a-Si:H: The Vital Importance of Defect Relaxation

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	331-334
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	164-166
Issue number	1-3
DOIs	https://doi.org/10.1016/0022-3093(93)90557-E
State	Published - 1993

NREL Publication Number

@article{e0b6f4863f5242e7bdf31f39396db148,

title = "Photocarrier Drift and Recombination in a-Si:H: The Vital Importance of Defect Relaxation",

author = "NREL",

year = "1993",

doi = "10.1016/0022-3093(93)90557-E",

language = "American English",

volume = "164-166",

pages = "331--334",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

number = "1-3",

}