Abstract
The transport properties of intrinsic hydrogenated amorphous silicon samples with the hydrogen content ranging from over 10% to less !%, which were produced by the hot-wire technique at NREL, were systematically studied by the photomixing technique. The continuous decay of electron drift mobility in intrinsic hydrogenated amorphous silicon (a-Si:H) upon light soaking was investigated. Thedegradation of photoconductivity, lifetime and drift mobility in theses a-Si:H samples while light-soaking were determined. The effects of deposition conditions on transport properties of intrinsic a-Si:H films were investigated.
Original language | American English |
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Number of pages | 49 |
State | Published - 1996 |
Bibliographical note
Work performed by the University of California, Los Angeles, CaliforniaNREL Publication Number
- NREL/TP-451-21704
Keywords
- amorphous silicon
- photomixing
- photovoltaics (PV)