Abstract
We report results of minority carrier lifetime measurements for double-sided p-type Si heterojunction devices and compare Suns-Voc results to Light I-V measurements on 1 cm2 solar cell devices measured on an AM1.5 calibrated XT-10 solar simulator.
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2008 |
| Event | 33rd IEEE Photovoltaic Specialists Conference - San Diego, California Duration: 11 May 2008 → 16 May 2008 |
Conference
| Conference | 33rd IEEE Photovoltaic Specialists Conference |
|---|---|
| City | San Diego, California |
| Period | 11/05/08 → 16/05/08 |
NREL Publication Number
- NREL/CP-520-42564
Keywords
- devices
- hot-wire chemical vapor deposition (HWCVD)
- indium tin oxide
- minority-carrier lifetimes
- photoconductive
- PV
- SHJ
- silicon heterojunction
- solar cells
- transparent conducting oxides (TCO)