Photoconductive Lifetime of CdS Used in Thin-Film Solar Cells

R. K. Ahrenkiel; D. H. Levi; S. Johnston; W. Song; D. Mao; A. Fischer

doi:10.1109/PVSC.1997.654146

Photoconductive Lifetime of CdS Used in Thin-Film Solar Cells

R. K. Ahrenkiel, D. H. Levi, S. Johnston, W. Song, D. Mao, A. Fischer

Materials Science

Research output: Contribution to conference › Paper › peer-review

11 Scopus Citations

Abstract

Thin-film CdS is used as a window layer in most of the current thin-film polycrystalline device technologies including absorbers based on cadmium telluride (CdTe) and copper indium selenide (CIS) and copper indium gallium selenide (CIGS). Device performance has been linked to the deposition technique and posttreatment of the CdS layer. Here we used the radio frequency photoconductive decay (RFPCD) technique to measure the photoconductive lifetime of CdS that had been deposited by various techniques. This includes chemical bath deposition (CBD) and laser deposition. CdCl₂ treatment increases the photoconductive response and reduces shallow trapping effects. In addition, tellurium doping was found to significantly decrease the photoconductive response, as well as the hole lifetime, below that of the undoped material. The impact of these CdS properties on device performance will be discussed.

Original language	American English
Pages	535-538
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654146
State	Published - 1997
Event	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
City	Anaheim, CA, USA
Period	29/09/97 → 3/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-530-22950

NREL Publication Number

NREL/CP-520-25052

Access to Document

10.1109/PVSC.1997.654146

Cite this

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title = "Photoconductive Lifetime of CdS Used in Thin-Film Solar Cells",

abstract = "Thin-film CdS is used as a window layer in most of the current thin-film polycrystalline device technologies including absorbers based on cadmium telluride (CdTe) and copper indium selenide (CIS) and copper indium gallium selenide (CIGS). Device performance has been linked to the deposition technique and posttreatment of the CdS layer. Here we used the radio frequency photoconductive decay (RFPCD) technique to measure the photoconductive lifetime of CdS that had been deposited by various techniques. This includes chemical bath deposition (CBD) and laser deposition. CdCl2 treatment increases the photoconductive response and reduces shallow trapping effects. In addition, tellurium doping was found to significantly decrease the photoconductive response, as well as the hole lifetime, below that of the undoped material. The impact of these CdS properties on device performance will be discussed.",

author = "Ahrenkiel, {R. K.} and Levi, {D. H.} and S. Johnston and W. Song and D. Mao and A. Fischer",

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doi = "10.1109/PVSC.1997.654146",

language = "American English",

pages = "535--538",

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AU - Ahrenkiel, R. K.

AU - Levi, D. H.

AU - Johnston, S.

AU - Song, W.

AU - Mao, D.

AU - Fischer, A.

N1 - For preprint version, including full text online document, see NREL/CP-530-22950

PY - 1997

Y1 - 1997

N2 - Thin-film CdS is used as a window layer in most of the current thin-film polycrystalline device technologies including absorbers based on cadmium telluride (CdTe) and copper indium selenide (CIS) and copper indium gallium selenide (CIGS). Device performance has been linked to the deposition technique and posttreatment of the CdS layer. Here we used the radio frequency photoconductive decay (RFPCD) technique to measure the photoconductive lifetime of CdS that had been deposited by various techniques. This includes chemical bath deposition (CBD) and laser deposition. CdCl2 treatment increases the photoconductive response and reduces shallow trapping effects. In addition, tellurium doping was found to significantly decrease the photoconductive response, as well as the hole lifetime, below that of the undoped material. The impact of these CdS properties on device performance will be discussed.

AB - Thin-film CdS is used as a window layer in most of the current thin-film polycrystalline device technologies including absorbers based on cadmium telluride (CdTe) and copper indium selenide (CIS) and copper indium gallium selenide (CIGS). Device performance has been linked to the deposition technique and posttreatment of the CdS layer. Here we used the radio frequency photoconductive decay (RFPCD) technique to measure the photoconductive lifetime of CdS that had been deposited by various techniques. This includes chemical bath deposition (CBD) and laser deposition. CdCl2 treatment increases the photoconductive response and reduces shallow trapping effects. In addition, tellurium doping was found to significantly decrease the photoconductive response, as well as the hole lifetime, below that of the undoped material. The impact of these CdS properties on device performance will be discussed.

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DO - 10.1109/PVSC.1997.654146

M3 - Paper

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T2 - Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Photoconductive Lifetime of CdS Used in Thin-Film Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

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