Photoconductive Properties of GaAs1-xNx Double Heterostructures as a Function of Excitation Wavelength

Photoconductive Properties of GaAs1-xNx Double Heterostructures as a Function of Excitation Wavelength

Research output: Contribution to conference › Paper

Original language	American English
Pages	265-271
Number of pages	7
State	Published - 2000
Event	Infrared Applications of Semiconductors III: Materials Research Society Symposium - Boston, Massachusetts Duration: 29 Nov 1999 → 2 Dec 1999

Conference

Conference	Infrared Applications of Semiconductors III: Materials Research Society Symposium
City	Boston, Massachusetts
Period	29/11/99 → 2/12/99

Bibliographical note

For preprint version, including full text online document, see NREL/CP-520-27634

NREL Publication Number

NREL/CP-520-29017

Cite this

@conference{15137e5d41994e7fa3a04585cfd80773,

title = "Photoconductive Properties of GaAs1-xNx Double Heterostructures as a Function of Excitation Wavelength",

author = "NREL",

note = "For preprint version, including full text online document, see NREL/CP-520-27634; Infrared Applications of Semiconductors III: Materials Research Society Symposium ; Conference date: 29-11-1999 Through 02-12-1999",

year = "2000",

language = "American English",

pages = "265--271",

}

TY - CONF

T1 - Photoconductive Properties of GaAs1-xNx Double Heterostructures as a Function of Excitation Wavelength

AU - NREL, null

N1 - For preprint version, including full text online document, see NREL/CP-520-27634

PY - 2000

Y1 - 2000

M3 - Paper

SP - 265

EP - 271

T2 - Infrared Applications of Semiconductors III: Materials Research Society Symposium

Y2 - 29 November 1999 through 2 December 1999

ER -