Photoconductive Properties of GaAs1-xNx Double Heterostructures as a Function of Excitation Wavelength

    Research output: Contribution to conferencePaper


    The ternary semiconductor GaAs1-xNx with 0 < x < 0.3 can be grown epitaxially on GaAs and has a very large bowing coefficient. The alloy bandgap can be reduced to about 1.0 eV with about a 3% nitrogen addition. In this work, we measured the internal spectral response and recombination lifetime of a number of alloys using the ultra-high frequency photoconductive decay (UHFPCD) method. The datashows that the photoconductive excitation spectra of the GaAs0.97N0.03 alloy shows a gradual increase in response through the absorption edge near Eg. This contrasts with most direct bandgap semiconductors that show a steep onset of photoresponse at Eg. The recombination lifetimes frequently are much longer than expected from radiative recombination and often exceeded 1.0 ms. The data wereanalyzed in terms of a band model that includes large potential fluctuations in the conduction band due to the random distribution of nitrogen atoms in the alloy.
    Original languageAmerican English
    Number of pages10
    StatePublished - 2000
    EventMaterials Research Society 1999 Fall Meeting - Boston, Massachusetts
    Duration: 29 Nov 19993 Dec 1999


    ConferenceMaterials Research Society 1999 Fall Meeting
    CityBoston, Massachusetts

    NREL Publication Number

    • NREL/CP-520-27634


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