Abstract
We observe improved photoconductivity stability against light-soaking in hydrogenated amorphous silicon thin films as a result of an ultraviolet (UV) illumination and etch treatment. UV-etch treated samples begins with red-light photoconductivities inferior to that of a control sample which is only etched. After less than an hour of 1 sun red light-soaking, the photoconductivity of the etched-only control falls below that of the UV-etch treated sample. After 2 to 3 days light soaking, the UV-etch films can have a photosensitivity 20 to 38% above their control. We observe no corresponding improvement of defect optical absorption by constant photocurrent method spectroscopy. The UV-etch treatment also produces small improvements in the stabilized open-circuit voltage of Schottky barrier solar cells. We speculate that mobile hydrogen produced during UV illumination is penetrating the film and improving stability.
Original language | American English |
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Pages | 453-458 |
Number of pages | 6 |
DOIs | |
State | Published - 2002 |
Event | Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium - San Francisco, California Duration: 2 Apr 2002 → 5 Apr 2002 |
Conference
Conference | Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium |
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City | San Francisco, California |
Period | 2/04/02 → 5/04/02 |
NREL Publication Number
- NREL/CP-520-34220